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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD200/D Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low-power, high-gain audio amplifier applications. * Collector-Emitter Sustaining Voltage -- VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc * High DC Current Gain -- hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc * Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) * Straight Lead Version in Plastic Sleeves ("-1" Suffix) * Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix) * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc * High Current-Gain -- Bandwidth Product -- fT = 65 MHz (Min) @ IC = 100 mAdc * Annular Construction for Low Leakage -- ICBO = 100 nAdc @ Rated VCB MAXIMUM RATINGS MJD200 PNP MJD210 SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS NPN IIIIIIIIIIIIIIIIIIIIIII II I I III I I I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I III IIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II III I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII Rating Symbol VCB VEB IC IB VCEO Value 40 25 8 Unit Vdc Vdc Vdc Adc Adc Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -- Continuous Peak Base Current 5 10 1 Total Device Dissipation @ TC = 25_C Derate above 25_C PD PD 12.5 0.1 Watts W/_C Watts W/_C Total Device Dissipation @ TA = 25_C* Derate above 25_C Operating and Storage Junction Temperature Range 1.4 0.011 TJ, Tstg - 65 to + 150 CASE 369A-13 CASE 369-07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0.190 4.826 _C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient* RJC RJA 10 89.3 _C/W Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0, TJ = 125_C) ICBO nAdc -- -- -- 100 100 100 0.243 6.172 0.063 1.6 inches mm Collector-Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0) VCEO(sus) 25 -- Vdc IEBO * When surface mounted on minimum pad sizes recommended. (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. Emitter Cutoff Current (VBE = 8 Vdc, IC = 0) nAdc [ (continued) REV 1 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 0.118 3.0 0.07 1.8 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) 0.165 4.191 Symbol Max Unit 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJD200 MJD210 (1) Pulse Test: Pulse Width = 300 s, Duty Cycle (2) fT = hfe* ftest. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS ELECTRICAL CHARACTERISTICS -- continued (TC = 25_C unless otherwise noted) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Current-Gain -- Bandwidth Product (2) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Base-Emitter On Voltage (1) (IC = 2 Adc, VCE = 1 Vdc) Base-Emitter Saturation Voltage (1) (IC = 5 Adc, IB = 1 Adc) Collector-Emitter Saturation Voltage (1) (IC = 500 mAdc, IB = 50 mAdc) (IC = 2 Adc, IB = 200 mAdc) (IC = 5 Adc, IB = 1 Adc) DC Current Gain (1) (IC = 500 mAdc, VCE = 1 Vdc) (IC = 2 Adc, VCE = 1 Vdc) (IC = 5 Adc, VCE = 2 Vdc) 2 t, TIME (ns) PD, POWER DISSIPATION (WATTS) 1.5 TA TC 2.5 25 0.5 1 0 2 100 t, TIME (ns) 500 300 200 1K 10 15 20 50 30 20 10 5 5 3 2 0 1 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 23 IC, COLLECTOR CURRENT (AMPS) 25 MJD200 MJD210 50 Figure 1. Power Derating Figure 3. Turn-On Time TC T, TEMPERATURE (C) tr TA (SURFACE MOUNT) 75 Characteristic td 100 [ 2%. VCC = 30 V IC/IB = 10 TJ = 25C 125 5 150 10 +11 V 0 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: FOR PNP TEST CIRCUIT, 1N5825 USED ABOVE IB 100 mA REVERSE ALL POLARITIES MSD6100 USED BELOW IB 100 mA 10K 100 500 300 200 tr, tf 10 ns DUTY CYCLE = 1% 1K 5K 3K 2K 50 30 20 10 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMPS) MJD200 MJD210 -9 V Motorola Bipolar Power Transistor Device Data MJD200 MJD210 Figure 2. Switching Time Test Circuit 25 s VCE(sat) VBE(sat) VBE(on) Symbol Figure 4. Turn-Off Time Cob hFE fT 51 tf RB Min 65 70 45 10 -- -- -- -- -- -- -- ts -4 V D1 0.3 0.75 1.8 Max 80 120 -- 180 -- 1.6 2.5 -- VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C VCC + 30 V RC MHz Unit Vdc Vdc Vdc SCOPE pF -- 3 5 10 MJD200 MJD210 NPN MJD200 400 TJ = 150C 25C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 200 - 55C 100 80 60 40 VCE = 1 V VCE = 2 V 0.5 0.7 1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 2 3 5 200 400 TJ = 150C 25C 100 80 60 40 VCE = 1 V VCE = 2 V 0.2 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (AMP) 3 5 PNP MJD210 - 55C 20 0.05 0.07 0.1 20 0.05 0.07 0.1 Figure 5. DC Current Gain 2 TJ = 25C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2 TJ = 25C 1.6 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1 V 0.4 VCE(sat) @ IC/IB = 10 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMP) 2 3 5 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1 V 0.4 VCE(sat) @ IC/IB = 10 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMP) 0.8 0.8 2 3 5 Figure 6. "On" Voltage + 2.5 V, TEMPERATURE COEFFICIENTS (mV/C) +2 + 1.5 +1 + 0.5 0 - 0.5 -1 - 1.5 -2 - 2.5 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 VB for VBE - 55C to 25C 2 3 5 - 55C to 25C 25C to 150C VC for VCE(sat) 25C to 150C *APPLIES FOR IC/IB hFE/3 V, TEMPERATURE COEFFICIENTS (mV/C) + 2.5 +2 + 1.5 +1 + 0.5 0 - 0.5 -1 - 1.5 -2 - 2.5 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5 25C to 150C VB for VBE - 55C to 25C *VC for VCE(sat) - 55C to 25C *APPLIES FOR IC/IB hFE/3 25C to 150C IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 7. Temperature Coefficients Motorola Bipolar Power Transistor Device Data 3 MJD200 MJD210 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 0.05 0.02 0.01 0 (SINGLE PULSE) D = 0.5 0.2 0.1 RJC(t) = r(t) JC RJC = 10C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 10 20 50 100 200 Figure 8. Thermal Response 10 IC, COLLECTOR CURRENT (AMP) 5 3 2 1 5 ms TJ = 150C 100 s 500 s dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 1 2 3 5 7 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 30 1 ms 0.1 0.01 0.3 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 9 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. T J(pk) may be calculated from the data in Figure 8. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Case 369-05 may be ordered by adding a "-1" suffix to the device title (i.e. MJD200-1) v Figure 9. Active Region Safe Operating Area 200 TJ = 25C C, CAPACITANCE (pF) 100 70 50 Cob 30 20 0.4 MJD200 (NPN) MJD210 (PNP) 0.6 1 2 4 6 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Cib Figure 10. Capacitance 4 Motorola Bipolar Power Transistor Device Data MJD200 MJD210 PACKAGE DIMENSIONS -T- B V R 4 SEATING PLANE C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --- 0.77 1.27 3.51 --- S 1 2 3 A K F L D G 2 PL Z U J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 369A-13 ISSUE W B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 A 1 2 3 S -T- SEATING PLANE K F D G 3 PL M J H 0.13 (0.005) T STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 369-07 ISSUE K Motorola Bipolar Power Transistor Device Data 5 MJD200 MJD210 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *MJD200/D* MJD200/D |
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